Silicon On Insulator IDEs
Microfabricated Si/SiO₂ IDE chips for Semiconductor-Compatible Sensing and Advanced Thin-Film Research
Schnaiffer Si/SiO₂ interdigitated electrodes combine gold sensing electrodes with the mechanical precision of a silicon substrate and the electrical insulation of a silicon-dioxide surface layer.
Semiconductor compatible
IDEs provide a microfabrication-compatible platform for integrating sensing layers, microheaters and on-chip electronics.
Electrical isolation
The SiO₂ layer electrically isolates the electrodes from the silicon substrate, supporting reliable impedance and capacitance measurements.
Precise, stable surface
Alumina provides a rigid, thermally stable coating surface but requires careful handling because it is brittle.
ENGINEERED PLATFORM
PRODUCTS
High-Performance Alumina IDEs for Thermally Stable and Electrically Reliable Sensing
Alumina -100 um
Write a short text about your service. Highlight key benefits for potential clients.
Service title
1A1A200 Write a short text about your service. Highlight key benefits for potential clients.
1A2A200 a short text about your service. Highlight key benefits for potential clients.
Service title
Service title 1A3A200
Service title 2A1A100
Write a short text about your service. Highlight key benefits for potential clients.
1A1A100 Write a short text about your service. Highlight key benefits for potential clients.
Product Specifications
Substrate system: silicon with silicon-dioxide insulating layer
Standard chip size: 10 × 10 mm
Electrode material: gold
Adhesion layer: titanium
Standard finger widths: 100 µm and 200 µm
Standard layouts: 3 different designs
Electrode configuration: two-terminal planar interdigitated structure
Surface access: exposed gold electrode and SiO₂ regions
Intended use: research, material characterization and sensor development
Biointerface
research
Supports functionalized surfaces for studying biomolecular binding, cell–surface interactions and electrochemical processes.
Chemical and environmental sensing
Detects changes in humidity, gases, solvents and ionic contaminants through impedance or capacitance variation.
Thin-film
characterization
Enables electrical evaluation of semiconducting, dielectric and conductive thin films under controlled test conditions.
Integrated microsystems
Suitable for research combining IDEs with microheaters, MEMS structures and silicon-compatible sensor electronics.
Photodetector development
Provides a silicon-compatible electrode platform for evaluating photoresponsive and optoelectronic sensing materials.
Advanced Si/SiO₂ IDEs, engineered for reliable electrical performance
APPLICATIONS
Measurement and Integration Recommendations
Alumina is opaque, so transmitted-light inspection through the chip is not possible. Top-side microscopy should be used to examine pattern coverage, cracks, delamination and particle agglomeration.
For reliable experiments:
Measure electrode resistance and open-circuit isolation before coating.
Record the uncoated impedance spectrum as a baseline.
Mask contact pads during spraying or drop casting.
Prevent conductive paste from spreading outside the intended active area.
Use thermally stable wiring for heated measurements.
Place the temperature sensor close to the active region.
Allow the device to reach thermal equilibrium.
Track baseline drift over repeated heating cycles.
Avoid excessive clamping force on the ceramic chip.
Why Schnaiffer
Multiple standard designs
One can choose among four Si/SiO₂ product variants without beginning with a fully custom fabrication run.
Schnaiffer helps researchers consider geometry, substrate coupling, coating properties and experimental fixtures before selecting the device.
Projects that move beyond a standard IDE can be reviewed for altered layouts, substrate specifications and integrated structures.
IDE chips undergo applicable visual inspection and continuity or isolation checks to identify pattern defects and unintended shorts.
Technical selection support
Quality control
Custom microfabrication capability
Move from Material Research to an Integrated Sensor
A well-selected Si/SiO₂ IDE can serve as the bridge between material characterization and an integrated semiconductor sensor.
Send Schnaiffer details of your sensing material, deposition method, particle or flake size, frequency range, expected resistance or capacitance, substrate-bias requirement and packaging constraints. We will help you choose a standard Si/SiO₂ IDE or evaluate a custom configuration
Frequently asked questions
Is the SiO₂ layer electrically insulating?
Yes, but its practical insulation performance depends on oxide thickness, quality, electric field, defects and operating environment. The oxide specification should be confirmed for demanding applications.
Can the silicon be used as a back gate?
Potentially, if the device is designed and electrically configured for this purpose. Silicon resistivity, oxide thickness, backside access and permissible gate voltage must be known before back-gate operation.
Can I use these IDEs for optical sensing?
They can be used with photoresponsive materials, but Si/SiO₂ is not transparent. Glass or quartz is more suitable when illumination or imaging through the substrate is required.
Which design should I order?
Select based on the complete dimensional drawing, coating method, sample volume, holder design and electrical measurement. Schnaiffer can help compare Designs 1, 2 and 3.
Request the SOI IDE catalogue, dimensional drawings, price quotation or custom-design review.
You didn’t come this far to stop